Effects of shutter transients in molecular beam epitaxy

Effects of shutter transients in molecular beam epitaxy

: We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements. We revealed two opposite e...

Effects of hydrogen during molecular beam epitaxy of GaN

Basics of Molecular Beam Epitaxy (MBE)

A brief introduction to the MBE technique is presented with main attention to the elemental source MBE. A discussion on the effusion cell as beam source is shortly given starting from ideal cases to real cells homogeneity problems. A short review regarding the thermodynamic approach to the MBE is pointed out. Focusing on the possibility that, despite the fact that MBE processes occur under stro...

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...

Effects of Mobility of Small Islands on Growth in Molecular Beam Epitaxy

The effects of mobility of small islands on island growth in molecular beam epitaxy are studied. It is shown that mobility of small islands affects both the scaling and morphology of islands during growth. Three microscopic models are considered, in which the critical island sizes are i∗ = 1, 2 and 3 (such that islands of size s ≤ i∗ are mobile while islands of size s ≥ i∗ +1 are immobile). As ...